Tutorial Day
A Tutorial Program will be held on Sunday, September 27. It is primarily intended for young researchers (PhD students and postdoctoral researchers) but is open to all participants. The tutorials will be delivered by invited experts and are designed to be accessible to attendees from diverse technical backgrounds. Separate registration and payment are required. Due to limited room capacity, registration may close before September 7 if the maximum number of participants is reached. If capacity permits, onsite registration will be available until the limit is reached. Participants may register through the conference website or at the on-site registration desk.
Lectures
Tsunenobu Kimoto
Kyoto University, Japan
Title : Fundamentals of SiC Power Semiconductors: Material and Device Physics
SiC power devices have gained increasing attention and widely been adopted in numerous power conversion systems. In this Tutorial Lecture, an overview of SiC material and device physics is presented. The major topics in this Lecture include updated physical properties, fundamentals of bulk and epitaxial growth, extended and point defects, ion implantation, MOS physics, and contacts. In particular, defect characterization and its reduction, MOS interface, carrier trapping and transport in SiC MOSFETs are highlighted.
Peter Friedrichs
Infineon Technologies, Germany
Title : How SiC power devices can re-shape modern power electronics
SiC based power semiconductors are meanwhile established elements in the library of engineers designing power conversion circuits. Leap frogs have been enabled in the fields of efficiency and power density. Beyond the classical range of applications, the features delivered by the state-of-the-art solid-state components open up new areas for the utilization of semiconductor-based elements. Prominent examples are circuit breakers especially for DC based networks and solid-state transformers which eventually leave their status of being just an academic passion. The tutorial will give an overview about the major historic and current application for power devices based on silicon carbide.
Shinsuke Harada
National Institute of Advanced Industrial Science and Technology, Japan
Title : Next Generation SiC Power Devices
The performance of SiC MOSFETs has continued to improve in recent years. A key challenge is reducing on-resistance, which is largely limited by channel resistance. To address this issue, various architectures have been proposed, achieving significant reductions in on-resistance. For further improvement, reducing drift resistance with a superjunction structure is regarded as a promising next step. In addition, studies are also underway on SiC devices with higher breakdown voltages and enhanced functionality. This lecture reviews recent progress in SiC SJ-MOSFETs and discusses their advantages over conventional SiC MOSFETs and Si SJ-MOSFETs, together with the required process technologies. It also introduces recent trends in next-generation power devices, including IGBTs, power ICs, and related technologies.
Ulrike Grossner
ETH Zürich, Switzerland
Title : From Material Perturbation to Device Degradation in SiC
To unlock the potential of SiC power semiconductors, it is essential to understand how material modifications from manufacturing processes or operational stress translate into device degradation. This tutorial links microscopic material changes to measurable device behavior through examples including implantation and interface effects, extreme high-field and thermal stress, and irradiation-induced modifications. Electrical, optical, and spatially resolved techniques, supported by physical modeling, illustrate how complementary observations can identify governing degradation mechanisms and establish causal links between material modifications and device reliability.
Yoshikazu Takahashi
Tohoku University, Japan
Title : SiC Power Modules : From the Basics to the Latest Trends
Recent research and development on SiC power devices has made remarkable progress, and their contribution to advancements in various power electronics applications is clear. Furthermore, the importance of power modules—which serve as the interface between power devices and power electronics circuits—is steadily increasing. The tutorial provides a basic overview of power modules and explains the latest technological trends, including state-of-the-art power modules currently under development, as well as high-reliability bonding technologies, high thermal conductivity technologies, low inductance technologies, and advanced gate drive technologies designed to maximize the performance of SiC power devices.
Tutorial Program Room: G403+G404 (4th Floor)
| Schedule | Title | Lecturer |
|---|---|---|
| 08:30 - 09:30 | Registration | |
| 09:30 - 09:40 | Tutorial Introduction | Dr. Yoshiyuki Yonezawa AIST, Japan |
| 09:40 - 10:40 | Fundamentals of SiC Power Semiconductors: Material and Device Physics | Prof. Tsunenobu Kimoto Kyoto University, Japan |
| 10:40 - 11:00 | Break | |
| 11:00 - 12:00 | How SiC Power Devices Can Re-Shape Modern Power Electronics | Dr. Peter Friedrichs Infineon Technologies, Germany |
| 12:00 - 13:30 | Lunch | |
| 13:30 - 14:30 | Next Generation SiC Power Devices | Dr. Shinsuke Harada AIST, Japan |
| 14:30 - 14:50 | Break | |
| 14:50 - 15:50 | From Material Perturbation to Device Degradation in SiC | Prof. Ulrike Grossner ETH Zürich, Switzerland |
| 15:50 - 16:10 | Break | |
| 16:10 - 17:10 | SiC Power Modules : From the Basics to the Latest Trends | Prof. Yoshikazu Takahashi Tohoku University, Japan |
| 17:10 - 17:30 | Wrap up | |