Scope
Scope
The aim of this conference is to discuss recent advances in crystal growth, characterization, control of material properties, device fabrication and packaging technologies, system applications as well as quantum applications concerning silicon carbide (SiC) and related materials including nitride-, oxide- and diamond-based materials.
In addition, it will discuss latest research results in device design, fabrication, characterization, packaging, and system applications to improve device performance and reliability, and address to contribute the realization of cutting edge devices and systems for green innovation.
The conference also serves as an international forum for the exchange of ideas on recent scientific and technical issues among researchers and engineers in industrial, academic and public sectors.
The scope of this conference covers the following topics on silicon carbide and related materials, including other wide bandgap (WBG) semiconductors such as III-nitrides, oxides, and diamond.
Topics
Topics will include:
Material and Growth
Bulk and epitaxial growth, Wafer manufacturing
Defects and Characterization
Fundamental properties, Point and extended defects, Characterization and imaging techniques, Surface characterization and modification
Device Process and Characterization
MOS interface and insulators, Device fabrication processes (e.g. Implantation, Oxidation, Surface treatments, Metallization, Ohmic and Schottky contact formations, and Dry etching technologies)
Device Physics, Design, and Characterization
Device design and testing, Novel device concepts and Characterization, Modelling and Simulation, Novel measurements techniques
Devices and Module Reliability, Packaging, and Applications
Modular and driver-circuit technologies, System applications, Packaging and device reliabilities
Quantum Applications and Sensors
Theoretical and experimental studies, Optical and electrical quantum techniques, for Magnetic, Electric field, and Temperature sensors, Single-photon sources and detectors
for SiC and related materials including other wide bandgap semiconductors such as III-nitrides, oxides, and diamond.