Plenary Lectures
PL-1
Yoshifumi Kato
MIRISE Technologies Corporation
Title : From Wafer to Inverter ; The MIRISE Power Device Journey
PL-2
Michael Krieger
Friedrich-Alexander-Universität Erlangen-Nürnberg
Title : Point Defects in Silicon Carbide (tentative)
PL-3
Rajib Datta
GE Vernova Advanced Research Center
Title : Emerging Applications of Silicon Carbide Power Devices in Medium Voltage Power Conversion (Tentative)
PL-4
Yasunori Tanaka
National Institute of Advanced Industrial Science and Technology
Title : Pioneering Next-Generation Power Devices at AIST (Tentative)
Invited Speakers
Takeshi Okamoto
MIRISE Technologies Corporation, Japan
Title : Development of fast 4H-SiC Bulk Crystal Growth by high-temperature gas-source method
Thomas Kuhr
Wolfspeed, USA
Title : Thick Epitaxy on 200mm Silicon Carbide for Ultra-High Voltage Devices
Noboru Ohtani
Kwansei Gakuin University, Japan
Title : Interactions between point defects/impurities and extended defects during 4H-SiC crystal growth
Takuma Kobayashi
The University of Osaka, Japan
Title : Advanced interface design through two-step hydrogen annealing for high-reliability SiC MOS devices
Dallas Morisette
Purdue University, USA
Title : Status and Prospects for Reduced Specific On-Resistance in Planar and Trench 4H-SiC MOSFETs
Naoki Watanabe
Hitachi, Ltd., Japan
Title：Ultra-High-Voltage SiC Bipolar Devices: Empowering the Green Power Grids
Sei-Hyung Ryu
Wolfspeed, USA
Title : High Voltage MOS devices in 4H-SiC: from Lab to Reality
Corinna Martinella
University of Montpellier, France
Title : Reliability of SiC Power Devices in Space and Atmospheric Radiation Environments
Thomas Basler
Chemnitz University of Technology, Germany
Title : Bipolar Degradation in SiC Power Devices: Still an Issue? Recent Findings and Perspectives for Applications and Standardization
Naoya Morioka
Kyoto University, Japan
Title : Spin and Charge Properties and Quantum Functionalities of SiC Color Centers
Yifan Dang
SICC, China
Title : Continuous Quality Enhancement of P-type 4H-SiC Substrates through Solution Growth
Fumihiro Fujie
Central Research Institute of Electric Power Industry, Japan
Title : Statistical Correlation Between Substrate Dislocations and Stacking Faults in SiC Epitaxial Growth
Koji Maeda
Central Research Institute of Electric Power Industry, Japan
Title : The Role of Temperature and Carrier Lifetime in Electronically-induced Expansion of Single Shockley Stacking Faults in 4H-SiC
Kotaro Yamanaka
Kyoto University, Japan
Title : Impact of Pre-Oxidation on Intrinsic Point Defect Formation in Electron-Irradiated 4H-SiC
Eiji Kagoshima
MIRISE Technologies Corporation, Japan
Title : Unique Threshold-Voltage Behavior in SiC n-Channel FinFETs with Fin Widths from 26 to 530 nm
Hirohisa Hirai
National Institute of Advanced Industrial Science and Technology, Japan
Title : MOS Channel Mobility Enhancement and Hole Trap Reduction in 4H-SiC (0-33-4) beyond (0-33-8)
Yuki Yoshimura
Kyoto University, Japan
Title : Dopant activation and compensation in P+-implanted n-type layers formed in a V-doped semi-insulating 4H-SiC substrate
Shinichiro Matsunaga
National Institute of Advanced Industrial Science and Technology, Japan
Title : Column Design for High Avalanche Withstanding Capability in 1.2kV-class SiC Superjunction MOSFET
Adam Gali
HUN-REN Wigner Research Centre for Physics, Hungary
Title : Quantum Sensing from 2-nm Shallow Divacancy-related Qubits in 4H-SiC
Invited Posters
Weining Qian
Epiworld International, China
Title: Development of n-type Epitaxial Growth on 300 mm 4H-SiC Wafers
Juhyeong Sun
Nagoya University, Japan
Title : Thermal response of threading dislocations in SiC substrates using UV-excited lock-in thermography
Heng Wang
Shenzhen Pinghu Lab., China
Title : Gate-Oxide Protection for Enhanced Single-Event Robustness in SiC Power MOSFETs
Kentaro Onishi
The University of Osaka, Japan
Title : Evolution of color centers at SiO2/SiC interfaces during repeated thermal annealing tracked in pre-defined observation windows