Tutorial Day
A Tutorial Program will be held on Sunday, September 27. It is primarily intended for young researchers (PhD students and postdoctoral researchers) but is open to all participants. The tutorials will be delivered by invited experts and are designed to be accessible to attendees from diverse technical backgrounds. Separate registration and payment are required. Due to limited room capacity, registration may close before September 7 if the maximum number of participants is reached. If capacity permits, onsite registration will be available until the limit is reached. Participants may register through the conference website or at the on-site registration desk.
Lectures
Tsunenobu Kimoto
Kyoto University, Japan
Title : Fundamentals of SiC Power Semiconductors: Material and Device Physics
SiC power devices have gained increasing attention and widely been adopted in numerous power conversion systems. In this Tutorial Lecture, an overview of SiC material and device physics is presented. The major topics in this Lecture include updated physical properties, fundamentals of bulk and epitaxial growth, extended and point defects, ion implantation, MOS physics, and contacts. In particular, defect characterization and its reduction, MOS interface, carrier trapping and transport in SiC MOSFETs are highlighted.
Ulrike Grossner
ETH Zürich, Switzerland
Title : Defect Analysis and Radiation Hardness of SiC (Tentative)
Peter Friedrichs
Infineon Technologies, Germany
Title : How SiC power devices can re-shape modern power electronics
SiC based power semiconductors are meanwhile established elements in the library of engineers designing power conversion circuits. Leap frogs have been enabled in the fields of efficiency and power density. Beyond the classical range of applications, the features delivered by the state-of-the-art solid-state components open up new areas for the utilization of semiconductor-based elements. Prominent examples are circuit breakers especially for DC based networks and solid-state transformers which eventually leave their status of being just an academic passion. The tutorial will give an overview about the major historic and current application for power devices based on silicon carbide.
Shinsuke Harada
National Institute of Advanced Industrial Science and Technology, Japan
Title : Next Generation SiC Power Devices
The performance of SiC MOSFETs has continued to improve in recent years. A key challenge is reducing on-resistance, which is largely limited by channel resistance. To address this issue, various architectures have been proposed, achieving significant reductions in on-resistance. For further improvement, reducing drift resistance with a superjunction structure is regarded as a promising next step. In addition, studies are also underway on SiC devices with higher breakdown voltages and enhanced functionality. This lecture reviews recent progress in SiC SJ-MOSFETs and discusses their advantages over conventional SiC MOSFETs and Si SJ-MOSFETs, together with the required process technologies. It also introduces recent trends in next-generation power devices, including IGBTs, power ICs, and related technologies.
Yoshikazu Takahashi
Tohoku University, Japan
Title : SiC Power Modules : From the Basics to the Latest Trends
Recent research and development on SiC power devices has made remarkable progress, and their contribution to advancements in various power electronics applications is clear. Furthermore, the importance of power modules—which serve as the interface between power devices and power electronics circuits—is steadily increasing. The tutorial provides a basic overview of power modules and explains the latest technological trends, including state-of-the-art power modules currently under development, as well as high-reliability bonding technologies, high thermal conductivity technologies, low inductance technologies, and advanced gate drive technologies designed to maximize the performance of SiC power devices.