Program at a Glance
| Sunday (Sep 27) |
Monday (Sep 28) |
Tuesday (Sep 29) |
Wednesday (Sep 30) |
Thursday (Oct 1) |
Friday (Oct 2) |
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| 8 | 00 | [North 1F] Registration desk opens 8:00-16:30 |
[North 1F] Registration desk opens 8:00-16:30 | [North 1F] Registration desk opens 8:00-16:30 | [North 1F] Registration desk opens 8:00-16:30 | [North 1F] Registration desk opens 8:00-12:00 | ||||||
| 10 | ||||||||||||
| 20 | ||||||||||||
| 30 | [North 1F] Registration desk opens 8:30-19:00 |
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| 40 | [Tu-1A] Novel Architectures (Track 07) |
[Tu-1B] Bulk Growth II (Track 01) |
[We-1A] Robustness (Track 09) |
[We-1B] Optimizing Access to Si Vacancies (Track 10) |
[Th-PL] Plenary Lecture |
[Fr-1A] SiC Epitaxy (Track 02) |
[Fr-1B] Super-Junction Process Technology (Track 06) |
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| 50 | ||||||||||||
| 9 | 00 | Opening 9:00-9:10 | ||||||||||
| 10 | [Mo-PL] Plenary Lecture |
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| 20 | ||||||||||||
| 30 | Tutorial | Break 9:25-9:50 | ||||||||||
| 40 | ||||||||||||
| 50 | [Th-1A] Reliability (Track 09) |
[Th-1B] Point Defects and Material Properties (Track 04) |
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| 10 | 00 | Break 10:00-10:30 |
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| 10 | Break 10:10-10:40 |
Break 10:10-10:40 |
Break 10:10-10:40 |
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| 20 | Break 10:20-10:40 |
Break 10:20-10:50 |
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| 30 | [We-2A] MOSFETs (Track 07) |
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| 40 | [IP] Invited Poster-Short Presentation |
[Tu-2A] FinFET and Trench Interfaces (Track 05) |
[Tu-2B] Extended Defects I (Track 03) |
[We-2B] Stacking Fault Expansion (Track 03) |
[Fr-2A] Bipolar Devices (Track 07) |
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| 50 | [Fr-2B] Extended Defects and Si Vacancies II (Track 03&10) |
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| 11 | 00 | Announcement 11:00-11:10 | ||||||||||
| 10 | Lunch 11:10-13:00 (layout change) |
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| 20 | ||||||||||||
| 30 | ||||||||||||
| 40 | ||||||||||||
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| 12 | 00 | Lunch 12:00-13:30 | ||||||||||
| 10 | ||||||||||||
| 20 | ||||||||||||
| 30 | Lunch 12:30-14:00 | Lunch 12:30-14:00 | ||||||||||
| 40 | Lunch 12:30-14:00 | |||||||||||
| 50 | ||||||||||||
| 13 | 00 | [Mo-P] Poster Session |
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| 10 | ||||||||||||
| 20 | ||||||||||||
| 30 | [Th-2A] Interface Charge (Track 05) |
[Th-2B] Si Vacancies towards Quantum Applications (Track 10) |
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| 40 | ||||||||||||
| 50 | ||||||||||||
| 14 | 00 | [Tu-3A] Implantation and Trench Process Optimization (Track 06) |
[Tu-3B] Rad-Hard Devices and High-Temp. ICs (Track 08) |
[We-3A] High Voltage Devices (Track 07) |
[We-3B] SiC and Related Material Epitaxy (Track 02) |
[Fr-3A] Mobility and Vth Drift (Track 09) |
[Fr-3B] Materials and Wafer Processing (Track 01) |
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| 10 | ||||||||||||
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| 30 | ||||||||||||
| 40 | ||||||||||||
| 50 | Break 14:50-15:00 | |||||||||||
| 15 | 00 | Break 15:00-15:10 | [Th-P] Poster Session |
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| 10 | [Mo-1A] MOS Interface Processing (Track 05) |
[Mo-1B] Bulk Growth I (Track 01) |
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| 20 | ||||||||||||
| 30 | [Fr-PL] Plenary Lecture |
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| 40 | ||||||||||||
| 50 | Break 15:50-16:00 | Break 15:50-16:00 | ||||||||||
| 16 | 00 | [Tu-P] Poster Session |
[We-P] Poster Session |
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| 10 | ||||||||||||
| 20 | Closing 16:15-16:45 |
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| 30 | ||||||||||||
| 40 | Break 16:40-17:00 | |||||||||||
| 50 | ||||||||||||
| 17 | 00 | [Mo-2A] Metal Contacts and Interface Engineering (Track 06) |
[Mo-2B] Emerging Quantum Color Centers (Track 10) |
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| 18 | 00 |
Welcome Reception 18:00-20:00 |
Banquet 18:00-21:30 |
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| 10 | ||||||||||||
| 20 | ||||||||||||
| 30 | Break 18:30-18:50 | |||||||||||
| 40 | ||||||||||||
| 50 |
Industrial Session-A 18:50-20:32 |
Industrial Session-B 18:50-20:26 |
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| 19 | 00 | |||||||||||
| 30 | ||||||||||||
| 20 | 00 | |||||||||||
| 30 | ||||||||||||
| 21 | 00 | |||||||||||
| 30 | ||||||||||||